Scientific papers
I.Reklaitis, E.Radiunas, T.Malinauskas, S.Stanionytė, G.Juška, R.Ritasalo, T.Pilvi, S.Taeger, M.Strassburg, R.Tomašiūnas. A comparative study on atomic layer deposited oxide film morphology and their electrical breakdown. Surf. Coat. Technol. 399, 126123 (2020).
R.Tomašiūnas, I.Reklaitis, E.Radiunas, G.Juška, R.Ritasalo, T.Pilvi, M.Mandl, S.Taeger, M.Strassburg. ALD oxides for GaN interfaces: a comparative view on the flat band. 21st International Conference on Transparent Optical Networks, ICTON '19, July 9-13, 2019, Angers, France. IEEE Proc., 4p., 2019 (ISBN: 978-1-7281-2779-8/19).
Reklaitis, L.Krencius, T.Malinauskas, S.Yu.Karpov, H.J.Lugauer, I.Pietzonka, M.Strassburg, P.Vitta, R.Tomašiūnas. Time of carrier escape and recombination coefficients in InGaN quantum-well active regions of blue, cyan, and green light-emitting diodes. Semicond. Sci. Technol. 34, 015007 (2019).
R.Tomašiūnas, I.Reklaitis, L.Krencius, P.Vitta, S.Karpov, H.J.Lugauer, M.Strassburg. Differential charge carrier lifetime investigated in a blue InGaN LED at operational conditions. 20th International Conference on Transparent Optical Networks, ICTON '18, July 5-9, 2018, Bucharest, Romania. IEEE Proc., 4p., 2018 (ISBN: 978-1-5386-6604-3/18).
V.Svrcek, M.Kolenda, A.Kadys, I.Reklaitis, D.Dobrovolskas, T.Malinauskas, M.Lozach, D.Mariotti, M.Strassburg, R.Tomašiūnas. Significant Carrier Extraction Enhancement at the Interface of an InN/p-GaN Heterojunction under Reverse Bias Voltage. Nanomaterials 8, 1039 (2018).
Conference Abstracts
S.Taeger. New Materials and Processes for next generation LEDs. 21st TCMnet Webinar, October 19, 2020.
https://tcm2020.org/index.php/webinar/
R.Tomašiūnas, I.Reklaitis, T.Malinauskas, S.Stanionytė, E.Radiunas, G.Juška, R.Ritasalo, T.Pilvi, M.Mandl, V.Müller, S.Taeger, M.Strassburg. ALD oxides towards LED improvement. 21st International Conference on Transparent Optical Networks, ICTON '19, July 9-13, 2019, Angers, France. (invited).
Read Abstract ICTON2019_Tomasiunas.pdf
M.Kolenda, V.Svrcek, A.Kadys, I.Reklaitis, D.Dobrovolskas, T.Malinauskas, R.Tomasiunas. Carrier extraction enhancement at InN/p-GaN interface heterojunction under reverse bias voltage. International Workshop on Nitride Semiconductors 2018, IWN 2018, November 11-16, 2018, Kanazawa, Japan.
Read Abstract MK_IWN2018_abstract.pdf and poster Poster_IWN2018.pptx
7th International Symposium on Transparent and Conductive Materials (TCM 2018), October 14 - 18, 2018, Platanias, Chania, Crete, Greece:
V.Müller. Insight into solid state lighting and functional materials for optoelectronic devices.
Read Abstract 180518_Abstract_Mueller.pdf
R.Tomašiūnas, E.Radiūnas, G.Domann, P.Löbmann, V.Müller, D.O'Brien, M.Strassburg. Sol-gel derived functional layers: impact on the film surface and bulk morphology.
Read Abstract TCM_2018_Tomasiunas_loeb_VMa.docx
D.Gaspar, S.Panigrahi, L.Pereira, E.Fortunato, R.Martins. Hydrogenated Indium oxide-based TCOs with improved electro-optical properties.
Read Abstract TCM2018_DianaGaspar.docx
C.Marques, D.Gaspar, L.Pereira, E.Fortunato, R.Martins. Influence of doping in crystallinity and electrical properties of sprayed p-type NiO thin films.
Read Abstract NiO_spray.docx
R,Walter, S.Roellgen, N.Stieglmeier, M.Maute. Low-damage ITO sputtering for LED application.
Read Abstract TCM_Abstract_OSRAM-Opto-Semiconductors-GmbH_Roellgen-Stefan.pdf
R.Ritasalo, T.Suni, T.Pilvi, R.Tomasiunas, I.Reklaitis, S.Taeger, E.Hörner, M.Mandl. Screening of barrier materials deposited by ALD for the use in LED lightning.
Read Abstract TMC2018_Flingo_barrier.docx
R.Tomašiūnas, I.Reklaitis, L.Krencius, P.Vitta, S.Karpov, H.J.Lugauer, M.Strassburg. Differential charge carrier lifetime in InGaN LEDs under working conditions. 20th International Conference on Transparent Optical Networks, ICTON '18, July 5-9, 2018, Bucharest, Romania. (invited)
Read Abstract ICTON2018_Tomasiunas.docx
R.Ritasalo, T.Suni, T.Pilvi, R.Tomasiunas, I.Reklaitis, S.Taeger, E.Hörner, M.Mandl. Screening of ALD barrier materials towards use in LED lightning. 18th International Conference on Atomic Layer Deposition (ALD 2018), July 29-August 1, 2018, Incheon, South Korea.
Read Abstract ALD2018_barrier_draft_ver4b.docx and poster draft_ALD2018_Poster-Barrier_materials-V3.jpg
Workshops
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